Narrow-gap semiconductor

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Narrow-gap semiconductors are semiconducting materials with a band gap that is comparatively small compared to that of silicon, i.e. smaller than 1.11 eV at room temperature. They are used as infrared detectors or thermoelectrics.

List of narrow-gap semiconductors[edit]

Name Chemical formula Groups Band gap (300 K)
Mercury cadmium telluride Hg1-xCdxTe II-VI 0 to 1.5 eV
Mercury zinc telluride Hg1-xZnxTe II-VI -0.15 to 2.25 eV
Lead selenide PbSe IV-VI 0.27 eV
Lead(II) sulfide PbS IV-VI 0.37 eV
Lead telluride PbTe IV-VI 0.32 eV
Indium arsenide InAs III-V 0.354 eV
Indium antimonide InSb III-V 0.17 eV
Gallium antimonide GaSb III-V 0.67 eV
Cadmium arsenide Cd3As2 II-V 0.5 to 0.6 eV
Bismuth telluride Bi2Te3 0.21 eV
Tin telluride SnTe IV-VI 0.18 eV
Tin selenide SnSe IV-VI 0.9 eV
Silver(I) selenide Ag2Se 0.07 eV
Magnesium silicide Mg2Si II-IV 0.73 eV[1]

See also[edit]

References[edit]

  1. ^ Nelson, J. T. Electrical and optical properties of MgPSn and MggSi. Am. J. Phys. 23: 390. 1955.
  • Dornhaus, R., Nimtz, G., Schlicht, B. (1983). Narrow-Gap Semiconductors. Springer Tracts in Modern Physics 98, ISBN 978-3-540-12091-9 (print) ISBN 978-3-540-39531-7 (online)
  • Nimtz, G. (1980), Recombination in Narrow-Gap Semiconductors, Physics Reports, 63, 265-300